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Lanthanides in Luminescent Thermometry Chapter 281 365 The seminal work of Kolodner and Tyson (1983) demonstrated the poten- tial of noncontact Ln3+-based thermometry to map integrated circuits. The authors reported the temperature mapping of a metal–oxide semiconductor field effect transistor (MOSFET) through the emission of a polymer film con- taining [Eu(tta)3·2H2O]. Based on shot noise of the collected light, a temper- ature uncertainty as low as 0.01 K was expected. However, experimental conditions (such as electric fluctuations of detection system) degrade this limit to the 0.1–1.0 K range. The spatial resolution is limited by the CCD smoothing to 15 mm and the temporal resolution by the exposure time of the camera, 5 s (Kolodner and Tyson, 1983). Brites et al. reported the fabrication of diureasil films incorporating [Eu(btfa)3(MeOH)(bpeta)] and [Tb(btfa)3(MeOH)(bpeta)] complexes for tem- perature mapping in wired-board circuits. The films allowed temperature mapping with dx 1⁄4 34 mm (Brites et al., 2010). A subsequent modification in the films production to include maghemite NPs increased the temperature gra- dient profile 10-fold, with concomitant improvement of the spatial resolution by an order of magnitude, dx1⁄43.4 mm (Brites et al., 2013c). In the Tb3+/Eu3+- doped diureasil films without maghemite NPs improving of the spatial resolu- tion up to 0.42 mm was also achieved by decreasing the scanning step from 800 to 50 mm. For these films, the temporal resolution was computed as dt1⁄44.8 ms (Brites et al., 2013a). Afterward, analogous Tb3+/Eu3+-doped diur- easil films were used to recover a Mach–Zehnder interferometer (Ferreira et al., 2013). This optoelectronic device operates with a temperature differ- ence between the arms of $1 K that results in a spatial resolution of dx1⁄428mm. The temporal resolution of the measurement is of the order of the integration time of the detector (100 ms). In Section 5, we will address the thermometric features of diureasil films incorporating [Ln(btfa)3(MeOH) (bpeta)] (Ln1⁄4Eu, Tb) complexes in more details. Thermoreflectance thermal imaging is an optical technique for measuring, with external illumination, the relative change in surface reflectivity as a func- tion of temperature (Burzo et al., 2005; Farzaneh et al., 2009; Kim et al., 2014). Burzo et al. used the thermoreflectance of a MOSFET device to map the temperature in a window of 15 50 mm2, with uncertainty of 2.6 K and a spatiotemporal resolution of 2.3 mm–1.1 ms (Burzo et al., 2005). Using the transparency of a Si substrate in the NIR spectral region, Tessier et al. recorded a backside temperature map of a MOSFET with dx1⁄41.7mm and dt1⁄450 ms, defined by the camera triggering (Tessier et al., 2007a). Raman spectroscopy is an optical technique that uses the vibrational, rota- tional, and other low-frequency modes for temperature measurement (Beechem et al., 2007). In 2009, for instance, Deshpande et al. used the temperature-dependent spatially resolved Raman peak shift of a single sus- pended carbon nanotube (CNT) under electrical heating (Deshpande et al., 2009). The reduced temporal resolution of the measurement (set by the integration time, 60–120 s) and the temperature uncertainty (dT$10 K) are balanced by the remarkable 0.1 mm spatial resolution. More recently,PDF Image | HANDBOOK ON THE PHYSICS AND CHEMISTRY OF RARE EARTHS
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