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PV Exploratory Research Performing Organizations: National Renewable Energy Laboratory DOE Golden Field Office Key Technical Contacts: Robert McConnell (NREL, Primary Contact), 303-384-6419, robert_mcconnell@nrel.gov Glenn Doyle (DOE/GO), 303-275-4706, glenn.doyle@go.doe.gov DOE HQ Technology Manager: Jeffrey Mazer, 202-586-2455, jeffrey.mazer@hq.doe.gov FY 2004 Budgets: $5,400K (NREL), $950K (DOE/GO) Objectives • High-risk/high-payoff third-generation PV technologies, primarily high-efficiency and exciton- based solar cells, aimed at substantially surpassing the performance of existing solar cell technologies • Fundamental research on perplexing issues within—and generation of innovative concepts for— current technologies • Fundamental understanding and implementation of performance-enhancing features of low-cost, high-efficiency crystalline silicon (c-Si) solar cells • DOE/GO-based cooperative agreement award supporting the Center of Excellence for optimizing solar cells through university/industry collaborations on production processes • Scientific and technical research opportunities for minority undergraduate and graduate students in solar energy technologies via the Minority University Research Associates (MURA) project. Accomplishments • Achieved 18%-efficient GaAs on Si/Ge buffer-layered (low-cost) silicon substrate (Ohio State). • Achieved 5.9%-efficient organic (plastic) solar cell (there is a strong market interest in plastic solar cells) (Princeton). • Measured extremely high quantum yields of 300% (3 excitons per photon) via efficient multiple- exciton generation. • Achieved highest independently verified III-V (GaAs) single-junction cell on Si PV cell efficiency: 18.1% AM1.5 with 10% grid coverage (~19% with 4.5% conventional metal coverage) (Ohio State). • Developed theory for the operational characteristics of grain boundaries in CIGS. • Identified and characterized metallic defects affecting most commercially available c-Si solar cells (UC Berkeley). • Demonstrated a correlation between in-plane stresses in Si sheet, cell processing, and the critical issue of wafer breakage (Georgia Tech, U. of South Florida). • Achieved a number of record high efficiencies (≥18% on 4 cm2 photolithography cells and manufacturable screen-printed cells on low-cost materials) (Georgia Tech). • Achieved first proof of concept of strong light-bending using silicon textured with a photonic crystal backside. • Achieved first III-V dual junction (DJ) solar cell on Si using SiGe; first transition from our record material quality for III-V on Si by ANY means, from single to multijunction cell (Ohio State). • Achieved first high-performance DJ cell on Si with a Voc of 2 volts (Ohio State).PDF Image | FY 2004 ANNUAL REPORT DOE Solar
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