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and film analysis to quickly screen the properties of alloys of InO2 and TiO2 over the full range of composition. The entire experiment, which could have takes months using conventional methods, was completed in a few weeks. The results (shown in Fig. 2) quickly guided further research to compositions of around 20% Ti. Fig. 2. Electronic properties of InTiOx One of the most important developments in the thin-film technologies is demonstrated in the 18.5% record efficiency achieved for Cu(In,Ga)Se2-based solar cells that incorporate a zinc sulfide (ZnS) compound as an alternative to the cadmium sulfide (CdS) layer in its device structure. Not only does the compound avoid perceived problems in the use of Cd, but its wider bandgap may enhance current generation and therefore improve performance. The wider bandgap value should in principle lead to additional current generation in the device, because additional photons, those no longer screened by the CdS layer, would now contribute to the overall photocurrent. The cell J-V parameters are as follows: Research targeting mid- or long-term applications engages collaborators just as described in the near-term problem-solving realm. For example, our work toward understanding the basic mechanisms involved in the formation of photovoltaic junctions in CIGS solar cells has been done in conjunction with the CIS National Team and several industrial partners. This model produced an early success with results for the cadmium partial electrolyte (Cd PE) treatment. This was developed on NREL absorbers and extended to Shell Solar Industries (SSI) absorbers. During the current period, we were involved in a joint experimental study with the absorber and junction subteams of the national team. The absorber team attempted to find a “figure of merit” that will enable us to distinguish a “good absorber” from a “bad absorber.” NREL absorbers and devices were provided for this study to serve as a benchmark for comparisons with other devices. Correlations between deep- level density and device performance was established. An unexpected (and possibly more interesting and useful) outcome of this exercise was the remarkable difference in the performance of solar cells fabricated from SSI absorbers where the window layers were processed at SSI and NREL. High-efficiency devices are gaining increased attention as novel concepts are proposed to push efficiencies above 50%. Much of this would be summarily dismissed, were it not for the very real achievement of 37% efficiency in III-V multiple- junction devices. Building from NREL’s 1985 invention of the dual-junction GaInP/GaAs tandem cell, all of the present 3-, 4-, and 5- junction designs drop from optimum performance because of the absence of a good option for a device at 1.0-eV bandgap. The dilute nitride systems hold the greatest promise for meeting this need, but to date have not delivered the high quantum efficiency needed to match the current of the rest of the structure. One way to accomplish an increase of current from the GaInNAs junction is to employ a p-i-n structure with a wide, intrinsic base layer. We have succeeded in growing GaInNAs solar cells with depletion widths ~3 μm by MBE, a hydrogen- and carbon-free growth technique, which minimizes impurities and the formation of associated point defects. For Voc Jsc FF (mV) (mA/cm2) (%) 670 35.11 78.78 Efficiency (%) 18.5 These J-V parameters are indeed very comparable to the current world-record devices that incorporate CdS (19.5% efficiency as we previously reported). High-efficiency CIGS cells have been fabricated without the need to do multiple coatings or extensive post-anneals, cumbersome processes required in earlier work. At this early stage of research, the ZnS layers can perform as well as CdS layers, and they represent another option to achieve >20% conversion efficiencies with further optimization.PDF Image | FY 2004 ANNUAL REPORT DOE Solar
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