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Electronic Materials and Devices Performing Organization: National Renewable Energy Laboratory Key Technical Contact: John Benner, 303-384-6496, john_benner@nrel.gov DOE HQ Technology Manager: Jeffrey Mazer, 202-586-2455, jeffrey.mazer@hq.doe.gov FY 2004 Budget: $9,245K _____________________________________________________________________________________ Objectives • Initiate research on high-performance heterojunction silicon solar cells. • Develop high-throughput materials research using combinatorial processes for deposition, diagnostics, and data analysis. • Test intrinsic device stability under water vapor and selected spectral and thermal stresses for CdTe cells. • Demonstrate a >13% CdTe cell fabricated with the simplified process. • Evaluate optimized cells grown by MBE to assess GaInAsN for multiple-junction cells. • Select in situ diagnostic tool and control system design for CIGS deposition system upgrade. Accomplishments • Increased Voc to 628 mV in amorphous silicon on p-type silicon heterojunction solar cells. • Installed and evaluated single-wavelength optical reflectance spectroscopy to be used as an in situ diagnostic of thin-film growth. • Demonstrated power of combinatorial diagnostic tools for rapid screening of materials properties. • Established operational laboratory for evaluation of intrinsic device stability and initial linkage between device design/processes and stability. • Demonstrated important improvement in new and conventional devices with several record efficiencies, including: o 18.5% efficiency in Cu(In,Ga)Se2 solar cells using ZnS(OH) alternative buffer layers o 16.5%efficiencyin1-μm-thickCIGSabsorbers o 19.5%efficiencyin3-stage-grownCIGS o 14.4%efficiencyinCdTedevicesprocessedonsodalimeglass. • Achieved quantum efficiencies >90% in dilute nitride 1-eV cells. • Demonstrated functional GaNPAs/Si multiple-junction solar cell. Future Directions • Advance the understanding and performance of heterojunction silicon devices. • Explore new concepts aimed toward preparation of crystalline silicon films on glass. • Establish new capabilities in combinatorial deposition, diagnostics, and data mining. • Push thin-film technologies toward higher throughput by increasing deposition rates and reducing thickness. • Improve the understanding and performance of heteroepitaxial III-Vs on silicon. _____________________________________________________________________________________PDF Image | FY 2004 ANNUAL REPORT DOE Solar
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