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Reach the 90% completion point for the International Module Intercomparison study (MYTP M-24, T-6): In FY 2005, the Cell and Module Performance Group has a priority 3 milestone to complete the next in series international intercomparisons. This is an important activity because it compares measurement procedures and results from all the key measurement organizations throughout the world. Currently, eight of the nine participants have tested the modules identified for this study. The groups participating are NREL, Sandia, Arizona State Photovoltaic Testing Laboratory, Florida Solar Energy Center, European Solar Test Installation, Fraunhofer Institute for Solar Energy Systems, and TUV in Germany. The modules have also been sent to the final participant, AIST, in Japan. China was removed from the list of invited participants based on a lack of interest. We are currently on schedule to complete this study, and a final report will be complete in FY 2005 as planned. 3.3 Electro-Optical Characterization Deep-level transient spectroscopy (DLTS) of GaAsN alloys used in multijunction solar cells (MYTP CPV M-2, T-1): The characterization and understanding of electronic defects in PV materials is vital to the advancement and use of PV materials and devices. This milestone focuses on the investigation of defects detrimental to the material and device quality of epitaxial GaAsN. This material system is a key component of the effort to achieve new world-record efficiencies for multijunction III-V solar cells. An electron trap in p-type GaAsN alloy material was detected when N was added to GaAs epilayers. This electron trap increased in concentration with increased N content for small concentrations (less then 0.6%). A bandgap reduction to approximately 1 eV would be required for certain solar cell configurations, requiring over 2% N. With less than 1% N added to GaAs epilayers, the material’s bandgap decreased only slightly, however, we found that the solar cell’s open- circuit voltage (Voc) decreased substantially. This decrease in Voc also corresponded to the appearance of the DLTS electron trap. A model that used a fit of the electron trap’s activation energy as a function of N content and proposed that the quasi-Fermi levels be pinned by the large number of these electron traps was shown to reasonably explain the decreased Voc values that were measured. Besides correlating the electron trap and its activation energy to the amount of decreased Voc, the appearance of the electron trap itself was characterized and modeled. Experimental results closely followed this model and showed that for such values of Schottky barrier, trap energy, capture rate, and trap concentration, electron traps could be detected in p-type material using only reverse bias. 14th Crystalline Si Workshop (MYTP M-9, T-1 and M-11&12, T-2): Bhushan Sopori organized the 14th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes, which was held in Winter Park, Colorado, August 8–11, 2004. In attendance were 118 scientists and engineers from 28 international PV and semiconductor companies and 22 research institutions. The theme of the workshop, Crystalline Silicon Solar Cells: Leapfrogging the Barriers, reflected progress in Si-PV technology over the past three decades, despite a host of barriers and bottlenecks. This workshop provides an invaluable opportunity to learn about current trends in both the European and Asian Si PV communities. Auto-tuning RCPCD apparatus development (MYTP M-22&25, T-6): A new, contactless measurement technique was developed based on the RCPCD technique. This technique, which has been applied to silicon wafers and several other materials, has generated several external publications. The sensitivity of minority-carrier lifetime allows the characterization of material quality by using non-destructive and contactless photoconductive decay. Although capable of measuring many types of materials, the resonant- coupled, photoconductive-decay (RCPCD) technique is particularly applicable to indirect- bandgap (Si) and small-bandgap materials (InGaAs). The present system requires pre- measurement tuning by simultaneously adjusting multiple components. A system expert can easily make point measurements, but continuous tuning to measure multiple samples or map multiple points on a single-large sample would be tedious and time consuming. An automated system hasPDF Image | FY 2004 ANNUAL REPORT DOE Solar
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