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In addition, we measured the spatial distribution of the electrical potential on cross sections of HIT Si cells using scanning Kelvin probe microscopy (SKPM). Because SKPM measures the distribution of surface potential, which is influenced by surface charges, we measured the potential changes induced by an external-bias voltage (Vb), which is equivalent to the potential change in the bulk. In this way, we were able to avoid the effect of surface charges or the surface Fermi-level pinning and obtained the Vb-induced potential changes in the bulk. We found that with a small Vb of ~ ± 0.2 V, the electrical junction coincides with the metallurgical interface of crystalline/amorphous Si within the resolution and statistical error of the measurement. The location of the electrical junction with the small Vb should be close to that of the “intrinsic” electrical junction without a Vb. Role of local built-in potential on grain boundaries in Cu(In,Ga)Se2 thin films and its effects on device photoconversion efficiency: Using SKPM, we observed that a local built-in potential exists on grain boundaries (GBs) in CIGS films. The SKPM potential image taken on samples that produced record-efficiency devices clearly showed a higher potential or a smaller work function on the GB than on the grain surface. The built-in potential on the GB was caused by positive charges trapped at the GB, and the potential can be expected to attract electrons and repulse holes and thus help in the collection of minority carriers. Further, we carried out detailed experimental work to determine whether such built-in potential on the GBs benefits device performance. This was done by varying the Ga content in the CIGS films and examining how the potential on the GBs changes with the Ga content. We have demonstrated that the local built-in potential on GBs of CIGS films indeed plays a significant role in photoconversion efficiency of the device. 3.2 Cell and Module Performance Task ISO 17025 Accreditation for secondary cell calibrations (MYTP M-4, T-1): The Cell and Module Performance Group achieved a very significant priority 3 milestone by attaining ISO 17025 accreditation for secondary-cell calibration under ASTM and IEC standards. The American Association for Laboratory Accreditation (A2LA) awarded the accreditation to NREL on September 14, 2004 (see Fig. 2). Fig. 2. A2LA ISO 17025 accreditation certificate Quality calibration plays a critical role in the product-manufacturing process. ISO accreditation provides our customers with confidence that the performance reported for these products is verifiable and internationally accepted. Many of our PV industry partners currently have ISO 9001 quality programs in place. These same companies rely on NREL for secondary-cell calibrations of the reference cells they use to measure their products. For this reason, it was critically important that NREL attain an ISO accreditation for the reference cells we calibrate for the PV community. The ISO 17025 accreditation provides NREL with international credibility and recognition. This process took two years to complete and involved establishing a very structured quality system, detailed work procedures, detailed document control methodology, formalized record-keeping process, rigorous management review process, corrective action plan process, and an instrument calibration validation process. Implementing and maintaining an ISO 17025 program is a significant and critically important task.PDF Image | FY 2004 ANNUAL REPORT DOE Solar
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