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Chapter 3 – Raman Spectroscopy of Graphene and Graphene-based Strain Sensors measuring the electrical response in situ during deformation, and found little change in electrical resistance up to 3 % strain, with GF ~ 1.9.308 Figure 3.13: a) AFM image of rippled MC graphene ribbons.276 b) Resistance response of the graphene ribbons with strain. The inset is the optical images before and after straining (20 % strain).276 c) Current- Voltage curves of CVD graphene strain sensor devices under different uniaxial strain. Inset show the schematics of strain sensor on PDMS substrate.309 d) Relative variation of resistance of the graphene strain sensor devices as a function of uniaxial strain (GF).309 Wang et al. demonstrated the use of rippled SLG on PDMS to obtain strain sensors with GF ~ -2.276 They fabricated the strain sensors by depositing the MC graphene on a pre-strained PDMS substrate, and the ripples were generated upon relaxing the substrate (Figure 3.13a). The resistance of the device decreased on straining (up to 20 % strain) due to flattening of the ripples, suggesting its sensitivity to strain (Figure 3.13b). The use of CVD SLG as a strain sensor was first demonstrated by Lee et al.310 The resistance increased (~492 to ~522 kΩ) upon application of strain (1 % strain), giving a GF of 6.1.310 Later Fu et al. reported improved strain sensitivity of strain sensor produced from CVD SLG on PDMS substrates with GF ~ 151 (Figure 3.13c,d).309 They have also noticed the resistance decreased slightly during the initial straining cycle followed by increase in resistance in the subsequent straining cycles. The decrease in resistance at the 93PDF Image | PRODUCTION AND APPLICATIONS OF GRAPHENE AND ITS COMPOSITES
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