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electrochemical polishing of the Cu foil, before rolling it into a tube. They proposed that during the annealing process, the evaporative loss of Cu in the inner surface of Cu tube was suppressed due to re-deposition of Cu in the confined space, resulting in flat inner surface.149 This was confirmed by AFM analysis which indicated the inner Cu tube surface were smoother and had fewer defects than the outer surface. As a result, single crystal graphene grains ~2 mm were formed on the inner surface of Cu the tube, with observed carrier mobilities of 5200 cm2/(Vs).149 Mohsin et al. have demonstrated mm-sized hexagonal single graphene grains could be grown on Cu by following a brief in situ treatment of the Cu foil.150 By melting and subsequent resolidification of Cu at atmospheric pressure, smoother surface (AFM analysis: resolidified Cu roughness ~8 nm, as-received Cu roughness ~160 nm) was obtained, resulting in the low nucleation density thereby achieving large grains.150 Figure 2.11:a) Images of many graphene domains among CVD graphene film.142 b) CVD GB containing aperiodic heptagon-pentagon pairs.142 c) Overlapped bilayer regions at CVD graphene GB.143 d, e) AFM image showing the tears occurred along the GBs during indentation.142 f) Optical and SEM image of mm- sized graphene single crystals grown on pre-treated Cu foils.148 g) mm-sized graphene grains grown on oxygen-rich Cu (48 hr growth).151 h) Merged sub-cm single crystal graphene grown on Cu foil.152 i) cm-sized single crystal graphene on Cu exposed to O2.153 Another method to produce large single grain graphene is to maintain the catalytic inactivity of copper(I) oxide (Cu2O) layer thereby reducing the graphene nucleation. Zhou et al. followed the idea by annealing the Cu in presence of pure Ar (rather than Ar/H2 mixture) gas, where the catalytic inactive Cu2O was formed.151 The presence of Cu2O reduced the graphene nucleation density from 10-6 to 4 nuclei cm-2. Such conditions resulted in ~5 mm (Figure 2.11g) sized hexagonal single graphene grain with straight edges (48 hr growth), with carrier mobilities up to 16000 cm2/(Vs). Using Chapter 2 – Graphene: Properties and Production 57PDF Image | PRODUCTION AND APPLICATIONS OF GRAPHENE AND ITS COMPOSITES
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