GRAPHENE SYNTHESIS CHARACTERIZATION PROPERTIES

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GRAPHENE SYNTHESIS CHARACTERIZATION PROPERTIES ( graphene-synthesis-characterization-properties )

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Large Scale Graphene by Chemical Vapor Deposition: Synthesis, Characterization and Applications 175 Fig. 14. Left: Photograph of CVD graphene FETs fabricated at large scale on a 4-inch Si/SiO2 wafer and schematic of the graphene FET device structure. Right: IVg characteristics of CVD graphene FETs synthesized on copper (up) and nickel (down). 3.2 CVD graphene for macroelectronics: Transparent conductive films Another intrinsic property of graphene is its transparency. A single sheet of graphene absorbs only 2.3 % of the incident light. Such combination of high conductivity and low light absorption makes this material an ideal candidate as a transparent conductive film. It is very tempting to use the unique properties of graphene for technology applications even beyond graphene FET applications. Composite materials, photodetectors, support for biological samples in TEM, mode-lockers for ultrafast lasers and many more areas would gain strongly from using graphene for non-FET purposes. 3.2.1 Large scale transfer of graphene Graphene obtained by chemical vapor deposition can be readily transferred to a number of different substrate surfaces at large scales. We have developed a transfer technique that allows transfer with 100% efficiency at large scales (Gomez De Arco, Zhang et al.; Gomez, Zhang et al. 2009). This technique employs a thin layer of poly-methylmethacrylate (PMMA) which is deposited on top of the as-synthesized graphene on Si/SiO2/Ni substrates. Dissolution of the metallic substrate where graphene is synthesized yields a free-standing PMMA/graphene stack, which then can be transferred by direct graphene contact onto any substrate, including transparent substrates such as glass and polyethylene terephthalate (PET) sheets. Figure 15a shows a schematic representation of the graphene transfer process to transparent substrates, either rigid or flexible. This large-scale transfer method is reliable and fully compatible with semiconductor industry procedures and technologies.

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