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GRAPHENE SYNTHESIS CHARACTERIZATION PROPERTIES

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GRAPHENE SYNTHESIS CHARACTERIZATION PROPERTIES ( graphene-synthesis-characterization-properties )

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ElelcetrcontircoTrnanicspoTrtrParonpesrtpieosorftFPewr-oLapyeerGrtriaephsenoefMaFteriawls-LayerGrapheneMaterials 1511 Au Au SiO2 SiO2 Au a) b) highly conductive Si 130 100 ) 120 Ω K(q Rs ))( 110 2Δ ) 10 q ΩΩ K KRs E ( ((n F l qs qs RR 20 1 10 2Δ EF 0 12 10 8 6 0.0 3V 2V 2.5V 0V -2V -4V 0.5 1.0 T-1/3 (K-1/3) 1.5 -4 c) -2 0 VTG(V) 2 4 0 25 50 75 100 125 150 T (K) d) Fig. 6. (a) Artistic impression of a double gated bilayer graphene device. (b) Square resistance Rsq of bilayer graphene as a function of back gate voltage (VBG) measured for different fixed values of the top gate voltage (VTG) at T=300mK. The position of the Fermi level and the applied perpendicular electric field are controlled by VBG and VTG. Panel (c) shows plots of the square resistance at different temperatures for the bilayer. (d) shows a plot of Rsq versus T and ln(Rsq) versus T−1/3 extracted from the measurements shown in panel (c), at VBG = −50V and different VTG values as indicated in the legend. The external electric fields applied on the bilayer for each different VTG are −0.177Vnm−1 (square symbols), −0.175Vnm−1 (triangle right symbols), −0.173Vnm−1 (circle symbols), −0.167Vnm−1 (triangle up symbols), −0.16Vnm−1 (triangle down symbols), −0.153Vnm−1 (triangle left symbols). (Adapted from Russo et al. (2009).) energy-gap and a variable range hopping current through the disorder induced sub-gap states (Taychatanapat et al. (2010); Yan et al. (2010); Zou et al. (2010)). The first direct observation of a gate-tuneable energy gap in bilayers was reported in infrared spectroscopy experiments (Mak et al. (2009); Zhang & Li et al. (2008); Zhang et al. (2009); Zhou et al. (2008)). This technique is mostly sensitive to band-to-band transitions, therefore it is not affected significantly by transitions in the sub-gap energy range. Whenever a band-gap is open in bilayer graphene, the infrared absorption displays a highly intense peak in the absorption spectra corresponding to the transition of charge particles from the top of the valence band to the bottom of the conduction band, see Fig. 7. This peak in the infrared

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