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6120 Graphene – Synthesis, Characterization, Properties anWdill-bAe-psept-lbiyc-IaN-tTiEoCnHs Fig. 3. Electron backscattering diffraction pictures taken from the surface of a HOPG sample. The area scanned is ≃ 80 × 65 μm2 and the depth less than 10 nm. 2.3 Influence of the internal microstructure on the temperature and magnetic field dependence of the longitudinal resistivity In order to investigate the intrinsic properties of graphite and taking into account the internal structure of bulk graphite samples, it appears obvious to study tens of nanometers thick graphite samples. Barzola-Quiquia et al. (2008) correlated the internal microstructure and sample size with the temperature and field dependence of the electrical resistivity. Whereas HOPG or graphite samples with thickness larger than ∼ 50 nm show a metallic-like behavior in the electrical resistivity vs. temperature, in the case of tens nanometer thick graphite samples, it steadily increases decreasing temperature, see Fig. 4(a). Fig. 4. (a) Normalized resistance versus temperature at zero applied fields for two multigraphene samples, namely: L5 (red dots) and L7 (empty black squares). The values of thickness and resistivity at 4 K are included in the inset table. The magnetoresistance (defined as shown in the y-axis) at three different temperatures are shown for samples L5 (b) and L7 (c). The magnetic field was applied parallel to the c-axis. Adapted from Barzola-Quiquia et al. (2008).PDF Image | GRAPHENE SYNTHESIS CHARACTERIZATION PROPERTIES
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