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106 Graphene – Synthesis, Characterization, Properties and Applications At the edge of a single layer graphene flake, the AFM surface profile of the HfO2 film deposited in the two-temperature process (see Fig. 8) corresponded very well to the profile recorded before deposition of the dielectric. This means that HfO2 film grew at the same rate on graphene and SiO2. However, as the surface of HfO2 films is still somewhat rougher on graphene compared to that on SiO2, the parameters of ALD process and the thickness of the seed layer need further optimization. (a) (b) Fig. 8. (a) AFM image of an edge of a single layer graphene flake after deposition of an 11 nm thick HfO2 layer in a two-temperature process (the rms surface roughness is 1.7 nm on graphene and 0.9 nm on SiO2). (b) AFM height profile over the edge shown in (a). (Adapted from Alles et al., 2011). Figure 9 shows the Raman spectra of a single layer graphene flake taken at the same location before and after the deposition of an 11 nm thick HfO2 layer in a two-temperature process. The intensities of peaks are lower after deposition and the background level has increased. But most importantly, the spectra reveal that noticable blueshifts of G- (at ~1580 cm-1) and 2D-bands (~2670 cm-1) of graphene by 9 cm-1 and 22 cm-1, respectively, have appeared as a result of HfO2 deposition. Fig. 9. Raman spectra of a single-layer graphene flake taken at the same point (a) before and (b) after the deposition of an 11 nm thick HfO2 layer in a two-temperature (170/300 oC) process. (Adapted from Alles et al., 2011).PDF Image | GRAPHENE SYNTHESIS CHARACTERIZATION PROPERTIES
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