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Atomic Layer Deposition of High-k Oxides on Graphene 105 (a) (b) (c) Fig. 6. AFM images of ~30 nm thick HfO2 films on top of graphene flakes deposited at 180 oC (the rms surface roughness < 0.5 nm), (b) in a two-temperature (170/300 oC) process (the rms surface roughness ~2.5 nm) and (c) at 300 oC (the rms surface roughness ~5 nm). The HfO2 films deposited to a thickness of 30 nm in a two-temperature process had the rms surface roughness values of ~2.5 nm and ~2 nm on graphene and on SiO2, respectively (Fig. 6b), and we recorded also Raman scattering from monoclinic HfO2 (Fig. 7). At the same time, the surface roughness of ~30 nm thick HfO2 films grown at 300 oC from the beginning of deposition process was as high as 5 nm on graphene and 2 nm on SiO2. Scattering from monoclinic HfO2 was recorded for these films as well (Fig. 7). Fig. 7. Raman spectra from HfO2 films on top of graphitic flakes deposited at 180 oC, 170/300 oC and 300 oC. In our study, we found that the rms surface roughness of 10 nm thick HfO2 films grown on graphene was markedly lower (~1.7 nm) compared with that of ~30 nm thick HfO2 films (~2.5 nm). Similar difference in surface roughness was observed for films deposited on SiO2. Thus, the rougher surface of thicker HfO2 films is due to crystallization of HfO2 during the film growth at higher temperature rather than because of nucleation problems on the surface of graphene.PDF Image | GRAPHENE SYNTHESIS CHARACTERIZATION PROPERTIES
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