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100 Graphene – Synthesis, Characterization, Properties and Applications and after the evaporation of the top gate revealed that deposition of the dielectric layer caused a considerable decrease in the drain current of the device (Fig. 1b). In addition, the current modulation through the back gate was reduced by the top gate. After this degradation the room-temperature electron and hole mobilities in graphene were as low as 710 cm2/Vs for holes and 530 cm2/Vs for electrons, i.e. comparable to the typical charge carrier mobilities in silicon. (a) (b) Fig. 1. (a) Scanning Electron Microscope image of a graphene FET. (b) Back-gate transfer characteristics of the graphene FET with and without a top gate (Adapted from Lemme et al., 2007). Using Raman spectroscopy, Ni et al. (2008a) have studied the effect of deposition of different dielectrics with various methods on top of graphene sheets. Figure 2 presents Raman spectra after deposition of SiO2 layer by Electron Beam Evaporation (EBE), Pulsed Laser Deposition (PLD) and Radio Frequency (RF) sputtering methods, HfO2 layer by PLD and polymethyl methacrylate (PMMA) layer by spin coating on top of graphene. As it can be seen, the used deposition methods (with the exception of spin coating) caused defects which showed up as appearence of the D-band in Raman spectra (~ 1350 cm-1) of graphene. Fig. 2. Raman spectra of graphene after deposition of SiO2 by RF sputtering, PLD and EBE, PMMA by spin coating and HfO2 by PLD. (Adapted from Ni et al., 2008a).PDF Image | GRAPHENE SYNTHESIS CHARACTERIZATION PROPERTIES
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