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28 Graphene – Synthesis, Characterization, Properties and Applications sccm, the ICP power for H radical generation was not applied. No CNWs were formed without irradiation by H radicals, but a very thin layer was apparent on the Si substrate, as shown in Fig. 6(a). Figure 6(b) shows that for a H2 gas flow rate of 3 sccm, nanoparticles rather than CNWs were deposited. In contrast, when the H2 gas flow rate was increased up to 5 sccm, CNWs were densely grown during the initial phase. In these samples, the distance between adjacent CNWs was approximately 10 to 20 nm, and the thickness of the CNW sheet was less than 5 nm. With further increase of the H2 gas flow rate to more than 10 sccm, no CNWs were grown, as shown in Fig. 6(e). (a) (b) (c) (d) (e) 50nm Fig. 6. Tilted-view SEM images of samples synthesized for 35 min at H2 gas flow rates of (a) 0, (b) 3, (c) 5, (d) 7, and (e) 10 sccm. Figure 7 shows the variation of CNW height measured from the cross-sectional SEM images as a function of the H2 gas flow rate. The height of CNWs increased with the H2 gas flow rate. The highest CNWs (approximately 48 nm) were obtained at a H2 gas flow rate of 5 sccm. Further increase of the H2 gas flow rate resulted in a decrease of the CNW height. It should be noted that at H2 gas flow rates greater than 10 sccm, CNWs were etched, which was confirmed by the following experiment: CNWs were synthesized in advance at a H2 gas flow rate of 7 sccm (as shown in Figs. 6(d)), and the substrate with CNWs was again introduced into the multi-beam system. H radicals (H2: 10 sccm or more) and other species (C2F6 at 10 sccm, Ar at 5 sccm and accelerated at 200 eV) were irradiated onto the CNW sample. As a result, the height of the CNWs was reduced with increase in the process time. The very thin layer evident in Fig 6(e) was probably deposited when all irradiation was ceased and the conditions of each species would change for just a moment.PDF Image | GRAPHENE SYNTHESIS CHARACTERIZATION PROPERTIES
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