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GRAPHENE SYNTHESIS CHARACTERIZATION PROPERTIES

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GRAPHENE SYNTHESIS CHARACTERIZATION PROPERTIES ( graphene-synthesis-characterization-properties )

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Self-Standing Graphene Sheets Prepared with Chemical Vapor Deposition and Chemical Etching 17 Fig. 16. The LETED pattern of single-layer graphene at (a) 1 kV and (b) 500 V. Fig. 17. The SEM image of folding double graphene sheet (a) and its LETED pattern at (b) 4 kV and (c) 2kV. 4. Conclusion The Ni(111) surface is the excellent substrate for growth of single-layer-graphene sheet with macroscopic dimensions. Graphene sheets with a 1 x 1 atomic structure grew up epitaxially by CVD or surface segregation techniques. We in-situ observed the graphene growth of mono-, bi- and tri-layer step by step using carbon segregation phenomena on Ni(111) by LEEM. The summaries are as follows; 1. One can grow the uniform monolayer graphene on Ni(111) by adjusting the temperature. No domain boundaries and wrinkles were detected by LEEM. 2. The second- and the third-layer graphene grew at the interface under the first and the second layers. Bi-layer graphene domains grew at least 100μm scale. The third-layer started to grow before the completion of second-layer at 1050K in this experiment. More precise control of temperature seems to be required to complete the second-layer before starting the third-layer growth.

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