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VAPOR PHASE TREATMENT OF DELECTRIC MATERALS

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VAPOR PHASE TREATMENT OF DELECTRIC MATERALS ( vapor-phase-treatment-delectric-materals )

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(12)UnitedStatesPatent Bhanapetal. (54) VAPORPHASETREATMENTOF DELECTRICMATERALS (75)Inventors:AnilS.Bhanap,Milpitas,CA(US); RobertR.Roth,Sunnyvale,CA(US); 5,915,175A 6/19Wise. .438,238 KikueS.Burnham,SanRamon,CA (US);BrianJ.Daniels,LaHonda,CA (US);DenisH.Endisch,Cupertino,CA (US);IlanGolecki,Parsippany,NJ(US) (73) Assignee: HoneywellInternational,Inc., Morristown,NJ(US) - (*) Notice: Subjecttoanydisclaimer,thetermofthis patentisextendedoradjustedunder35 U.S.C.154(b)by187days. (21) Appl.No.:11/086,010 DE 6,037.275A 3,2000 W W- uetal. . .438/780 6,042,94.A 3/20 Yangetal..430,296 6,090,724.A 7/20Sheltonetal. 6,177,143B1 1/2001Treadwelletal..427,515 6,208,014 B1 3/2001 Wu etal. .257,629 (Continued) FOREIGN PATENT DOCUMENTS 1013O824 10,2002 (Continued) OTHER PUBLICATIONS 1-1. (22) Filed: Mar.22,2005 Prior Publication Data S.V. Nita, etal., "Surface Modified Spin-On Xerogel Films as InterlayerDielectrics',1999AmericanVacuumSociety,p.205 212. (Continued) PrimaryExaminer—AlexanderGGhyka (74)Atorney,Agent,orFirm—RichardS.Roberts;Roberts & Roberts,L.L.P. (57) ABSTRACT Theinventionconcernsamethodforapplyingasurfacemodi ficationagentcompositionfororganosilicateglasdielectric films.Moreparticularly,theinventionpertainstoamethod fortreatingasilicateororganosilicatedielectricfilmona substrate,whichfilmeithercomprisessilanolmoietiesorhas hadatleastsomepreviouslypresentcarboncontainingmoi etiesremovedtherefrom.Thetreatmentaddscarboncontain ingmoietiestothefilmand/orsealssurfaceporesofthefilm, whenthefilmisporous. (65) (51) (52) (58) (56) US2006/0216952A1 Sep.28,2006 Int.Cl. HOIL 2/3 (2006.01) U.S.Cl..438/787;438/781;438/790: 438/4;257/E21.243 FieldofClasificationSearch.438/787, 438/790,781,4 Seeaplicationfileforcompletesearchhistory. ReferencesCited U.S.PATENTDOCUMENTS 4,567,221 A 4,624,739 A 4,654,269 A 5,079,300 A 5,271,777 A 1/1986 Maruyamaetal..542/436 11/1986 Nixonetal. .438/723 3/1987 Lehrer.428,428 1/1992 Dubrowetal..525,106 12/1993 Duffy.148,537 36Claims,3DrawingSheets -Catalyst Temp. controlled reservoir Tempcontrolled reaction chamber WacLur -Showerhead Wafer (heatedwithlamps) SystemConfigurationC USOO7678712B2 (10)PatentNo.: US 7,678,712B2 (45)DateofPatent: Mar.16,2010 5,429,730A 5,479,727A 5,576,247 A 7,1995Nakamuraetal..204,192.34 1/1996 Fineetal..34,516 11/1996 Yanoetal.. .438,760 St.A 1E.Singssal..53.i. -W S C al. ....... ---

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