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Significant progress has been made in the area of thin-film copper indium diselenide (CuInGaSe2, CIS) and related materials. For small-area laboratory devices, total-area conversion efficiency of 19.5% has been achieved by NCPV scientists. Using a ZnS buffer layer, a total-area conversion efficiency of 18.5% has also been achieved by NCPV scientists. For more details, refer to the Electronic Materials and Devices report. In a joint collaborative research effort between International Solar Electric Technology (ISET) and the NCPV, an NREL-verified, total- area conversion efficiency of 13.3% has been achieved using ISET’s patented ink-based nanotechnology process for the absorber formation. The National CIS R&D Team held its team meeting focusing on key CIS research issues such as grain boundaries. Progress has also been made in the area of thin-film CIGS module fabrication in the past year. Global Solar Energy (GSE), Tucson, AZ, along with ITN Energy Systems (ITN/ES), Littleton, CO, fabricated a thin-film CIGS module with an aperture-area conversion efficiency of 10.1% and a power output of 71.2 W, the highest output for any CIS- based module made by a U.S. company. Improvements in thickness, uniformity, stoichiometry, and yield over a 1000-foot-long stainless steel (ss) web resulted in these improvements. ITN/ES assisted GSE in intelligent processing and in-situ diagnostics, which resulted in better stoichiometry and uniformity control of the ss web. NREL, GSE, and ITN/ES were the joint winners of the prestigious R&D100 Award for 2004 for the development of lightweight, flexible thin-film CIGS modules. This is the seventh R&D 100 Award won by the Thin Film PV Partnership Program. Shell Solar Industries, Camarillo, CA, installed two of the world’s largest installations of CIS-based PV modules. A 245-kW rooftop solar electric array was installed in Camarillo, CA, atop the company’s solar cell manufacturing facility; and an 85-kW building integrated PV (BIPV) thin-film, CIS-based facade was deployed in North Wales, U.K. Energy Photovoltaics (EPV) fabricated a 7.5% thin-film CIGS module using the hybrid sputtering- evaporation process. A recent press release indicated that a major investment (to the tune of about $90 million) will be made in a U.S.-based CIS nano-ink company in the very near future. This company has been part of our development program for more than a decade (although its current contract will not be renewed in FY 2005 because of our budget shortfall). The biggest developments in FY 2004 thin-film amorphous and crystalline Si films were significant production increases at Uni-Solar Ovonic and the bankruptcy of AstroPower, Inc., and subsequent sale of its assets to GE Energy. Uni-Solar Ovonic reported that it produced 1.5 MWp of product on its 30-MW manufacturing line during June 2004. Further increases of this manufacturing rate are expected for FY 2005. Also remarkable is that a significant fraction of Uni-Solar Ovonic products were shipped as roofing laminates rather than as standard modules, which marks the first time that a thin-film PV manufacturer has been successful in penetrating the BIPV market (i.e., developed a unique product for a unique application). AstroPower had been working under subcontract on a thin-film solar cell cell prepared by melt- recrystallizing a CVD-deposited (~50–100-μm– thick “growth” layer) on a ceramic substrate. Then, active solar cell layers were deposited epitaxially by CVD. Small-area solar cells were prepared by this method with efficiencies as high as 9.2%. A serious drawback to the approach was the low recrystallization speed of the first CVD seed layer (less than 1 cm/min). Based on the limited potential of this method for near-term commercialization, and because of the December 2003 decrease in the FY 2004 thin-film PV budget and the bankruptcy of AstroPower, it was decided to eliminate the third planned phase of this project. Much of the R&D effort in amorphous silicon was geared toward developing low-temperature- deposited nanocrystalline (nc-Si) film as a replacement for the narrow-bandgap a-SiGe:H cell currently used in spectrum-splitting multijunctions. This approach had received significant attention in Europe and Japan. Several subcontractors (Uni-Solar Ovonic, EPV, and MVSystems) achieved respectable cell results, suggesting that U.S. entities also have the know- how for making such state-of-the-art solar cells. The work confirmed the general observation thatPDF Image | FY 2004 ANNUAL REPORT DOE Solar
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