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comparison, GaInNAs grown by MOCVD typically shows background carrier concentrations near 1017 cm–3, with corresponding depletion widths of ~0.2 μm as-grown. These new MBE- grown cells, most with bandgaps near 1.3 eV, show greatly enhanced short-circuit currents and QEs compared to reports in the literature. In addition, recent cells with Eg~1.15 eV show no degradation in depletion width or QE compared to samples with higher bandgaps. Figure 3 shows the QE measurements of three GaInNAs solar cells, displaying the difference between wide and narrow depletion widths at Eg~1.3 eV, as well as the QE from a cell with Eg~1.15 eV. This basic cell structure does not employ a BSF, and has no window layer and no way to remove the contact layer after processing. This leads to recombination of carriers at the front surface and the associated poor blue response. The QEs for the samples with the wide depletion widths are, to our knowledge, the best reported for a GaInNAs sample. with cost targets for concentrating PV systems. Further improvements may well need to target the substrates used for manufacture of these thin-film cells. The present technology using germanium wafers faces barriers in reducing the cost of the substrate and production efficiency limited by the relatively small area of current substrates. Development of technology to build high- performance devices on silicon substrates would address both of these barriers. NREL’s work in this area during 2004 shows some substantial progress. Again, the properties of dilute nitride are exploited to minimize change in the lattice constant of the alloy while engineering the desired bandgap. In this case, the GaNPAs alloy is explored to produce a top cell for use on silicon. Figure 4 displays the quantum efficiency for a GaAsNP and silicon junctions. These were assembled along with a tunnel-junction interconnect to make the first functioning GaAsNP/Si tandem cell. Si GaAsNP 1.0 0.8 0.6 0.4 0.2 0.0 EB163, W=0.4 μm EB217, W=2.4 μm EB234, W=2.3 μm 1.0 0.8 0.6 0.4 0.2 0.0 1.0 1.5 1.2 1.4 Energy (eV) 2.0 2.0 2.5 3.0 3.5 Energy (eV) Fig. 3. Comparison of QEs for similar samples with wide and short depletion widths High-efficiency skeptics will level their first criticism of the technologies at the cell manufacturing costs. With widespread use of comparable technologies in light-emitting diodes for traffic signs and other illumination applications, along with continued development of satellite power, the devices are easily compatible Fig. 4. Quantum efficiency measurement of the component junctions of a III-V-on-silicon tandem solar cell 4. Planned FY 2005 Activities Our activities in FY 2005 will predominantly continue the avenues pursued in the current year. As described above, we will move more resources toward exploration of new processes and diagnostics. Some notable examples in the 1.6 1.8 Internal QE Internal QEPDF Image | FY 2004 ANNUAL REPORT DOE Solar
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