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In FY 2004, we initiated several major experiments (described in the following) that demonstrate the utility of this system. An XPS and UPS investigation of CBD-related CIGS surface chemistry was initiated. CIGS films were exposed to both partial electrolyte and full chemical bath depositions in the glove box. Processed films were transferred in situ to the XPS for analysis. High-resolution, core-level spectra show removal of contaminants, as well as the depletion of Ga and In from the surface due to ammonium hydroxide exposure (partial electrolyte). XPS and UPS measurements on these surfaces show the presence of a Cu+1, consistent with the formation of a detrimental layer of Cu2Se at the surface. Measurements made after controlled air exposures of the treated surface show that this state disappears in minutes. This experiment would be impossible without the cluster tool. This work was presented at the IEEE PV Specialists Conference, January 2005. A unique photoemission study was completed investigating doping mechanisms in p-type nitrogen-doped ZnO thin films. By making use of in-situ ion-implantation and characterization techniques in the XPS, it was possible to quantify and identify for the first time four different nitrogen chemical environments in ZnO. Systematic differences in abundances of these nitrogen chemical states were observed between films grown via MOCVD and reactive sputtering. The data have led to new explanations for poor nitrogen electrical activity normally found in N- doped ZnO and the realization that MOCVD films grown with diethylzinc have significant levels of carbon contamination. Based on the results, recommendations were made for changes in growth methods that should lead to improved nitrogen doping of ZnO. This study would not have been possible without the ability to create and study clean surfaces in the cluster tool. This work has been accepted for publication in the Journal of Applied Physics in early 2005. Improvements were made to the standard chemical-bath deposition process for CdS window-layer growth on CIGS by adding a non- interfering nonionic surfactant to the bath. The surfactant eliminates bubble formation, thereby improving coating uniformity. Devices made with the new CdS had a 23% efficiency gain relative to devices with standard CBD-grown CdS, which is due primarily to an average increase of 93 mV in Voc. Experiments using the cluster tool show that carbon and oxygen are incorporated during normal CBD growth and are not from the surfactant. Complete a study of the CdTe back contact chemistry, aimed at achieving better process control, reproducibility, and reliability (MYTP M- 19-21, T-5): During FY 2004, we made important advances toward understanding the chemistry between Cu and CdTe. Cu is a critical component in most thin-film CdTe back contact schemes. The major points are summarized below. All of these results have important ramifications for fabricating stable back contacts to CdTe, and none could have been obtained without the capabilities provided by the cluster tool. We measured the reaction kinetics of Cu with the CdTe(111)-B surface by in-situ deposition of Cu on clean CdTe followed by temperature- programmed desorption (TPD) experiments. The TPD experiments show the rate of reaction for Cu with CdTe is zero order, or independent of concentration. We observed a temperature-reversible surface- segregated Cu-phase on CdTe(111)-B surfaces by using in-situ temperature-programmed XPS measurements. The Cu segregates in a monolayer thick phase at the surface of the CdTe at lower temperatures and diffuses into the bulk as the temperature is raised. Cu will reversibly re- segregate as the temperature is lowered. The transition temperature for this change is 250°– 300°C. XPS shows that the Cu and Cd concentrations are complementary, implying Cu displaces Cd in the surface phase. We observed a metastable CuxTe bulk phase at the CdTe(111)-B surface after experiments involving deposition of Cu and heating to 250°–300°C (temperatures well within the processing range of CdTe devices). Although it appears in the same temperature range, this phase is separate from the surface-segregated phase identified above. The bulk CuxTe phase inhibits faceting of the surfacePDF Image | FY 2004 ANNUAL REPORT DOE Solar
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