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been constructed that can perform the following functions: 1) move stage to load position for initial placement of sample; 2) move stage to measurement position; 3) auto-tune multiple controls to find the most sensitive measurement condition; and, 4) fit photoconductive decay curve, returning a decay time constant or lifetime value. This demonstrates all elements necessary for a manufacturing-friendly diagnostic tool. Complete development of a high-speed, non- contact wafer thickness measurement and mapping system and apply this method to Si wafer used by the PV industry (MYTP M-22&23, T-6): A new diagnostic for rapidly mapping the thickness of antireflection (AR) coatings was developed and tested in FY 2004. This technique uses an imaging approach obtained by fitting the previously developed PV Reflectometer with a CCD camera and a band-pass filter so that a spatial-reflectance image of a sample can be obtained. In the resulting image, the local values of the intensity are inversely proportional to the AR coating thickness. This proportionality allows an easy conversion of reflectance image into a thickness image. With this modification, the Reflectometer can be operated in either the spectrum or imaging mode. In the spectrum mode, the reflected light is directed to a diode array spectrometer to rapidly measure “average” parameters of the entire wafer/cell (for process monitoring). In the imaging mode, the reflected light is filtered and directed to a camera to generate an image of the AR-coated wafer. This technique is also applicable for mapping wafer thickness and meets an important FY 2004 Division milestone. Figure 3 shows AR thickness images of two samples from the same batch of production wafers (textured and AR-coated) from a solar cell manufacturer. The maps show the wafer-to-wafer variation caused by deposition system inconsistencies. Also shown are horizontal and vertical line profiles along the center of each wafer. Fig. 3. AR coating thickness maps from two wafers from the same batch, showing AR coating thickness uniformity. 3.4 Surface Analysis Process integration tool development (MYTP M-5, T-1): During FY 2004, we completed construction and testing and began regular operation of the surface analysis test platform for process integration, also referred to as the cluster tool. This project involved integrating the team’s x-ray and ultraviolet photoelectron and Auger electron spectrometers (XPS/UPS, AES) together with a deposition system and nitrogen-purged glove box (see Fig. 4). All four stations are connected through an ultra-high vacuum (UHV) transfer system. This new capability allows us to study controlled surfaces, with and without exposure to atmosphere, ultimately leading to better fundamental understanding of PV materials and device properties. Fig. 4: Photograph of the surface analysis process integration tool completed in FY 2004PDF Image | FY 2004 ANNUAL REPORT DOE Solar
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