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2.5 Process Integration Task • Complete preliminary design specifications of the process integration platform to facilitate seamless integration of deposition, processing, and characterization tools. A summary of progress on this milestone is outlined in section 3.5. Budget allocations by task are provided below. ordering in the GaNP alloys. To investigate the origin of defects and antiphase domains in MOCVD GaNP and GaP layers grown on Si substrates, a series of thin GaP layers grown on Si, using different substrate annealing and growth conditions, were examined. The growth conditions for achieving the lowest density of dislocations and antiphase domains were ascertained. Microstructure and electrical properties of the c-Si/a-Si interface in HIT Si cells (MYTP M-12, T-2): In collaboration with NREL’s Si group, the microstructure and interface properties of HIT cells were investigated. Such cells have recently demonstrated world-record efficiency on single- side, untextured Si HIT structures. The microstructure of these record-efficiency cells and other Si HIT cells with lower efficiency was investigated using high-resolution and analytical- electron microscopy. We found that thinner n- layer and a high-quality heterojunction are two critical parameters for achieving high efficiency. The Si HIT cells with record efficiency exhibited almost perfect c-Si/a-Si interfaces and a thin, but uniformly n-type, a-Si layer, as shown in Fig. 1. The cells with lower efficiency (e.g., low Voc) always showed either an imperfect c-Si/a-Si interface or a too-thick n-layer. The structure of some textured Si HIT cells has also been investigated. We found that the quality of the texture (i.e., the uniformity) directly affects cell performance. Fig. 1. TEM micrograph of a c-Si/a-Si interface of a high-performance Si HIT cell Task Title Analytical Microscopy Cell and Module Performance Electro-Optical Characterization Surface Analysis Process Integration Mgmt./Maintenance/HiPerPV 3. Results and Accomplishments FY 2004 Budget ($K) 1,468 1,168 1,787 1,201 523 1,133 Research results outlined in this section address only FY 2004 priority 3 and 4 milestones, and therefore, this report represents only a portion of all support and research activities within the Division. A more complete summary of all Division research activities can be found in our bimonthly reports. Highlights for each task, along with the corresponding link in the DOE Solar Program Multi-Year Technical Plan (MYTP), are outlined below. 3.1 Analytical Microscopy Task Growth morphology, defect structure, and compositional uniformity of dilute nitride alloys (MYTP CPV M-2, T-1): In collaboration with NREL’s III-V Group, MOCVD-grown GaNP and GaNPAs epitaxial layers on Si substrates were investigated by TEM and CL. These structures are being developed for multijunction devices on Si. Particular emphasis was placed on the initiation of growth on Si substrates as that determines the structural quality of the device. GaNP layers grown on Si substrates (annealed prior to growth under PH3) and a thin GaP buffer layer contained a high density of threading dislocations and antiphase domains. The antiphase domains were confined in the region close to the substrate/layer interface. In addition to the above defects, transmission electron diffraction revealed evidence of weak CuPt-typePDF Image | FY 2004 ANNUAL REPORT DOE Solar
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