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understand why the efficiency of green LEDs is significantly lower than the LEDs in the violet-blue part of the spectrum, and to use this knowledge to fabricate green LEDs with significantly higher efficiency (by at least a factor of 2). InGaN-based LEDs and laser diodes (LDs) have great commercial potential because they work in the short-wavelength region, which has, up to now, been inaccessible for LED and LD technologies. By improving our understanding of these mechanisms, it should be possible to significantly improve the structural design, and with it, the performance of the devices. Subtask 1: QDLED Development. The QDLED development project, planned for three 1-year phases, will focus on design and demonstration of QDLEDs fabricated by the all-solid-state approach during Phase I. Project tasks will include: (1) complete design data for the QDLEDs; (2) detailed description of the technology developed for the fabrication of QDLED using the all-solid-state approach; (3) characterization results for the QDLEDs implemented using inorganic semiconductors; (4) design, fabrication, and characterization details for organic semiconductor QDLEDs; and (5) evaluation of the two technologies. Subtask 2: Green LED Research. BU will fabricate the active region of the green LEDs using self- assembled InGaN QDs. It is well known that QDs are generally free of strain, and thus, one would not expect either phase separation or long-range atomic order to occur, because both of these phenomena are strain driven. An additional problem with LEDs based on InGaN alloys grown on foreign substrates (such as sapphire) is the high concentration of dislocations, which act as non-radiative recombination centers. BU proposes to investigate the incorporation of GaN or InN QDs in the nucleation layer of the device structure to deflect the dislocations and facilitate their annihilation as the film grows thicker. The current method of making InGaN LEDs is metal-organic chemical vapor deposition. In this method, the formation of the active region of the LED structure, which consists of InGaN/GaN multiple quantum wells, is done at a single temperature (~700°–800°C). This temperature range is appropriate for the growth of the InGaN wells, but it is low for the growth of the GaN barriers. Thus, the quantum well structures are grown under less than optimum conditions. In BU’s approach, the active region of the device would be fabricated by molecular beam epitaxy (MBE), under which the optimum temperature for growth is ~700°–800°C. The LED structures will be fabricated and packaged in the well-equipped facilities at the BU Photonics Center, using optical lithography and flip-chip bonding processes. Materials will be characterized using various structural and optoelectronic probes, and devices will be evaluated for spectral purity and optical power. The proposed 1-year program should result in higher (by factor of 2) external quantum efficiency than the current green LEDs. BU proposes to deliver two prototype green LED structures at month 6 and month 12 of the program. The first deliverable will be an unprocessed LED structure, which can be probed at the wafer level. The second deliverable will be a flip-chip bonded and packaged green LED device. In addition, BU proposes to deliver a semiannual and an annual report describing the program’s progress. UNLV-BU Collaboration on Inorganic QDLED. The collaborative effort between UNLV and BU will include the investigation of (1) QDLEDs on GaN/AIGaN heterostructures and (2) capping layers to improve extraction efficiencies of LEDs, including surface plasmon effects in metallic nanoparticles. Toward these goals, BU will provide MBE-grown GaN/AIGaN heterostructure LED structures to UNLV, which will carry out the deposition of QDs and nanoparticles. The principal investigators from UNLV and BU will closely interact in the design of the heterostructures, deposition of the nanomaterials, and fabrication and characterization of LEDs. For this collaborative component, BU will provide about four GaN/AIGaN heterostructures to UNLV during the project year. 2.2 Task 2: LED Display Engineering UNLV’s College of Engineering will identify, develop, and implement engineering solutions for display-related problems, such as quality of display, durability, energy efficiency, and economics. A primary objective is to develop a nascent entertainment-engineering program to provide a future workforce of skilled and trained engineers for the development and deployment of energy-efficient lighting technology. Variability of quality and performance of LEDs (which can result from the manufacturing process 187 EERE Crosscutting ActivitiesPDF Image | DOE Solar Energy Technologies Program
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