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Chapter 7 – Application of Graphene composites: Raman Strain Sensors 7.3.2.5.2. Doping levels in the CVD graphene coatings The analysis of the G band in the samples does let the relative effects of doping and strain on the Raman spectra to be calculated, as the G band is more strain sensitive to dopants than the 2D band. The Raman data was also used to evaluate the degree of doping in the samples. For the doping study, spectra were obtained from low power (< 1 mW) Argon laser (514 nm) in Renishaw 2000 spectrometer. The position and FWHM of the G and 2D band are sensitive to both doping55, 354 and strain.32, 256 It has been shown previously that the position of the 2D band shifts < 1 cm-1 for carrier concentrations below 3 1013 cm-2, whereas the G band shifts up to 30 cm-1. Hence the position of the G band was used to analyse the doping levels. It can be clearly seen from Figure 7.18, that the position of G band before and after cyclic deformation are 1592 cm-1 and 1588 cm-1, respectively. The difference in the position of the G band after deformation (1588 cm-1) compared to the literature values (1583 cm-1)55, 354 for very little or no doping, corresponds to an estimated hole doping level less than 0.5 × 1013 cm-2.55, 451 For this hole doping levels, the 2D band shift is < 1 cm-1, which in turn again supports the argument that shift of 2D band position (20 cm-1 before deformation) was mainly because of the strain effects in this study and not doping. Figure 7.18: Position of G band before and after cyclic deformation of CVD graphene coatings 225PDF Image | PRODUCTION AND APPLICATIONS OF GRAPHENE AND ITS COMPOSITES
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