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Article https://doi.org/10.1038/s41467-023-35986-3 Phonon-mediated room-temperature quantum Hall transport in graphene Received: 26 November 2021 Accepted: 10 January 2023 Check for updates Daniel Vaquero 1,10, Vito Clericò 1,10, Michael Schmitz2,3, Juan Antonio Delgado-Notario 1,4, Adrian Martín-Ramos1, Juan Salvador-Sánchez 1, Claudius S. A. Müller 5,6, Km Rubi5,6, Kenji Watanabe 7, Takashi Taniguchi 8, Bernd Beschoten 2, Christoph Stampfer 2,3, Enrique Diez 1, Mikhail I. Katsnelson 6, Uli Zeitler 5,6, Steffen Wiedmann 5,6 & Sergio Pezzini 9 The quantum Hall (QH) effect in two-dimensional electron systems (2DESs) is conventionally observed at liquid-helium temperatures, where lattice vibra- tions are strongly suppressed and bulk carrier scattering is dominated by disorder. However, due to large Landau level (LL) separation (~2000 K at B = 30 T), graphene can support the QH effect up to room temperature (RT), concomitant with a non-negligible population of acoustic phonons with a wave-vector commensurate to the inverse electronic magnetic length. Here, we demonstrate that graphene encapsulated in hexagonal boron nitride (hBN) realizes a novel transport regime, where dissipation in the QH phase is gov- erned predominantly by electron-phonon scattering. Investigating thermally- activated transport at filling factor 2 up to RT in an ensemble of back-gated devices, we show that the high B-field behaviour correlates with their zero B- field transport mobility. By this means, we extend the well-accepted notion of phonon-limited resistivity in ultra-clean graphene to a hitherto unexplored high-field realm. Van der Waals heterostructures of graphene and hBN have recently granted experimental access to novel phenomena in condensed matter1. The use of hBN as atomically-flat encapsulating dielectric, in particular, permits a drastic reduction of extrinsic disorder in gra- phene devices2, leading to the observation of zero-field transport regimes dominated by either electron-electron3, electron-hole4 or electron-phonon (e-ph) interaction5, which manifest over different carrier density and temperature ranges. Toward RT (T ~ 300 K), the scattering of electrons with acoustic phonons was theoretically identified as the main intrinsic contribution to the electrical resistivity in graphene6–8, implying a carrier mobility exceeding 105 cm2V−1s−1 at low carrier concentration (n < 1012 cm−2). While such figures could already be inferred from early data on disordered SiO2-supported graphene (~104 cm2V−1s−1 mobility)9,10, at present, the reach of the zero- field acoustic-phonon-limit is firmly established as a generic property of high-quality graphene devices5, also when encapsulated in hBN crystals from different sources11 or engineered to high doping levels (n > 1013 cm−2)12. Notable exceptions to the cleanness-implies-high-RT- 1Nanotechnology Group, USAL–Nanolab, Universidad de Salamanca, E-37008 Salamanca, Spain. 2JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany. 3Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany. 4CENTERA Laboratories, Institute of High Pressure Physics, Polish Academy of Sciences, 29/37 Sokołowska Str, Warsaw, Poland. 5High Field Magnet Laboratory (HFML-EMFL), Radboud University, Toernooiveld 7, 6525 ED Nijmegen, The Netherlands. 6Radboud University, Institute for Molecules and Materials, Heyendaalseweg 135, 6525 AJ Nijmegen, The Netherlands. 7Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan. 8International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan. 9NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy. 10These authors contributed equally: Daniel Vaquero, Vito Clericò. e-mail: sergio.pezzini@nano.cnr.it Nature Communications | (2023)14:318 1 1234567890():,; 1234567890():,;PDF Image | Phonon-mediated quantum Hall transport in graphene
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