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1656 Graphene – Synthesis, Characterization, Properties anWdill-bAe-psept-lbiyc-IaN-tTiEoCnHs No. 19, article number 195401, ISSN 1098-0121 Avetisyan, A.A.; Partoens, B.; Peeters, F.M. (2010). Stacking order dependent electric field tuning of the band gap in graphene multilayers. Phys. Rev. B, Vol. 81, No. 11,article number 115432, ISSN 1098-0121 Bae, S.; Kim, H.; Lee, Y.; Xu, X.F.; Park, J.S.; Zheng, Y.; Balakrishnan, J.; Lei, T.; Kim, H.R.; Song, Y.I.; Kim, Y.J.; Kim, K.S.; Ozyilmaz, B.; Ahn, J.H.; Hong, B.H.; Iijima, S. (2010). Roll-to-roll production of 30-inch graphene films for transparent electrodes. Nature Nanotechnol., Vol. 5, No. 8, page numbers (574-578), ISSN 1748-3387 Bao, W.; Jing, L.; Lee, Y.; Velasco Jr., J.; Kratz, P.; Tran, D.; Standley, B.; Aykol, M.; Cronin, S.B.; Smirnov, D.; Koshino, M.; McCann, E.; Bockrath, M.; Lau, C.N. (2011). Stacking-Dependent Band Gap and Quantum Transport in Trilayer Graphene. arxiv.org online resource, article code 1103.6088 Castro, E.V.; Novoselov, K.S.; Morozov, S.V.; Peres, N.M.R.; Dos Santos, J.M.B.L.; Nilsson, J.; Guinea, F.; Geim, A.K.; Neto, A.H.C. (2007). Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect. Phys. Rev. Lett., Vol. 99, No. 21, page number (216802), ISSN 0031-9007 Castro Neto, A.H.; Guinea, F.; Peres, N. M. R.; Novoselov, K. S.; Geim, A. K. (2009). The electronic properties of graphene. Reviews of Modern Physics, Vol.81, No.1, page numbers (109-162), ISSN 0034-6861 Castro, E.V.; Novoselov, K.S.; Morozov, S.V.; Peres, N.M.R.; dos Santos, J.M.B.L.; Nilsson, J.; Guinea, F.; Geim, A.K.; Neto, A.H.C. (2010). Electronic properties of a biased graphene bilayer. J. Phys.: Condens. Matter, Vol. 22, No. 17, article number 175503, ISSN 0953-8984 Craciun, M.F.; Russo, S.; Yamamoto, M.; Oostinga, J.B.; Morpurgo, A.F.; Thrucha, S. (2009). Trilayer graphene is a semimetal with a gate-tunable band overlap. Nature Nanotechnol., Vol. 4, No. 6, page numbers (383-388), ISSN 1748-3387 Craciun, M.F.; Russo, S.; Yamamoto, M.; Tarucha, S. (2011). Tuneable electronic properties in graphene. Nano Today, Vol. 6, No.1, page numbers (42-60), ISSN 1748-0132 Danneau, R.; Wu, F.; Craciun, M.F.; Russo, S.; Tomi, M.Y.; Salmilehto, J.; Morpurgo, A.F.; Hakonen P.J. (2008). Shot noise in ballistic graphene. Phys. Rev. Lett., Vol. 100, No. 19, article number 196802, ISSN 0031-9007 Danneau, R.; Wu, F.; Craciun, M.F.; Russo, S.; Tomi, M.Y.; Salmilehto, J.; Morpurgo, A.F.; Hakonen, P.J. (2008). Evanescent Wave Transport and Shot Noise in Graphene: Ballistic Regime and Effect of Disorder. J. Low Temp. Phys., Vol. 153, No. 5-6, page numbers (374-392), ISSN 0022-2291 Danneau, R.; Wu, F.; Craciun, M.F.; Russo, S.; Tomi, M.Y.; Salmilehto, J.; Morpurgo, A.F.; Hakonen, P.J. (2009). Shot noise measurements in graphene. Solid State Comm., Vol. 149, No. 27-28, page numbers (1050-1055), ISSN 0038-1098 Ferreira, A.; Viana-Gomes, J.; Nilsson, J.; Mucciolo, E.R.; Peres, N.M.R.; Castro Neto, A.H. (2011). Unified description of the dc conductivity of monolayer and bilayer graphene at finite densities based on resonant scatterers. Phys. Rev. B, Vol. 83, No. 16, article number 165402, ISSN 1098-0121 Geim, A. K.; Novoselov, K. S. (2007). The rise of graphene. Nature Materials, Vol.6, No.3, page numbers (183-191), ISSN 1476-1122 Gierz, I.; Riedl, C.; Starke, U.;Ast, C.R.; Kern, K. (2008). Atomic Hole Doping of Graphene. Nano Lett., Vol. 8, No. 12, page numbers (4603-4607), ISSN 1530-6984PDF Image | GRAPHENE SYNTHESIS CHARACTERIZATION PROPERTIES
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