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ElelcetrcontircoTrnanicspoTrtrParonpesrtpieosorftFPewr-oLapyeerGrtriaephsenoefMaFteriawls-LayerGrapheneMaterials 1515 Fig. 9. Panel (a) is a color coded plot of dG/dB versus gate voltage for the magnetic field range of 0T to 2T and at T=0.3K measured in the suspended bilayer device of Fig. 3. As the magnetic field is increased in addition to an insulating state at filling factor ν = 0, also the quantum Hall plateaus at ν = ±4, ±8, ... are visible (dashed lines are a guideline for the eyes). The graph in (b) is a plot of the conductance versus gate voltage for B=2T (T=0.3K) showing the bilayer Hall quantization sequence. 5. Conclusions The gate tuneable band structure of FLGs is an unprecedented physical property which paves the way to conceptually novel physical phenomena. For instance, an asymmetry induced by a perpendicular electric field applied onto bilayer graphene, not only opens a gap but it also affects the pseudospin of the charge carriers (Min et al. (2008); San-Jose et al. (2009)). This pseudospin characterises the layer degree of freedom, and it constitutes an additional quantum number for the charge carriers. Recent theoretical schemes propose the use of the pseudospin for new devices in which an on/off state of the current is attained respectively for parallel and antiparallel pseudospin configurations in the bilayer. In these pseudospin-valve devices the polarity of the electric field acting on bilayer graphene plays a similar role as the magnetic field in spin-valve devices. This is the emerging field of pseudo-spintronics. 6. Acknowledgements S.R. and M.F.C. acknowledge financial support by EPSRC (Grant no. EP/G036101/1 and no. EP/J000396/1). S.R. acknowledges financial support by the Royal Society Research Grant 2010/R2 (Grant no. SH-05052). M.Y. acknowledges financial support by Grant-in-Aid for Young Scientists A (no. 20684011) and ERATO-JST (080300000477). S.T. acknowledges financial support from Special Coordination Funds for Promoting Science and Technology (NanoQuine), JST Strategic International Cooperative Program and MEXT Grant-in-Aid for Scientific Research on Innovative Areas (21102003). 7. References Avetisyan, A.A.; Partoens, B.; Peeters, F.M. (2009). Electric-field control of the band gap and Fermi energy in graphene multilayers by top and back gates. Phys. Rev. B, Vol. 80,PDF Image | GRAPHENE SYNTHESIS CHARACTERIZATION PROPERTIES
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