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Experimental Study of the Intrinsic and Exxpetriminenstaicl StTudryaonf tshepInotrintsiPc arnodpExetrintsieic sTraonsfpoGrt rParopehrtietseofaGnradphiMte aundltMigurltiagrpaphenne SeamSpalesmples 12173 (a) SampleAatT=60K (b) SampleAatT=250K (c) SampleBatT=10K (d) SampleBatT=300K Fig. 7. Measured resistance as a function of the constriction width W at (a) 60 K and (b) 250 K for sample A. The point with the largest W corresponds to the virgin sample without a constriction. The different lines correspond to the ballistic contribution (dashed line) and ohmic second (dotted line) and third (dashed-dotted line) terms in Eq. (2). The continuous line represents the addition of the three contributions. For (a) the continuous line is calculated with l = 1.2 μm and for (b) l = 0.8 μm. (c) and (d): Normalized resistance for sample B vs. constriction width W at 10 and 300 K. Note the semi logarithmic scale. The line with steps is obtained dividing the ballistic term in Eq. (2) by (λF/2W)trunc(2W/λF) with the parameters l = 2.7 μm and λF = 1.5 μm. The dashed line follows Eq. (2). The dotted line is obtained multiplying the ballistic term in Eq. (2) by the exponential function exp(λF/2W). (d) The same as in (c) but the continuous line was obtained with the parameters λF = 1.0 μm and l = 2.2 μm. The dashed stepped function is obtained using the same λF but with a smaller l = 1.3 μm. Adapted from Dusari, Barzola-Quiquia, Esquinazi & García (2011). supporting the view that the graphene layers within graphite are of better quality and with a smaller carrier density than single layer graphene. Obviously neither sample A nor B nor the HOPG sample are free from defects and therefore we expect that the obtained values might still be improved in ideal, defect-free graphite structures.PDF Image | GRAPHENE SYNTHESIS CHARACTERIZATION PROPERTIES
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