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112 Graphene – Synthesis, Characterization, Properties and Applications 6. References Alles, H.; Aarik, J.; Aidla, A.; Fay, A.; Kozlova, J.; Niilisk, A.; Pärs, M.; Rähn, M.; Wiesner, M.; Hakonen, P. & Sammelselg, V. (2011). Atomic Layer Deposition of HfO2 on Graphene from HfCl4 and H2O. Central European Journal of Physics 9(2): 319-324 Bae, S.; Kim, H .; Lee, Y.; Xu, X.; Park, J.-S.; Zheng, Y.; Balakrishnan, J.; Lei, T.; Kim, H.R.; Song, Y.I.; Kim, Y.J.; Kim, K.S.; Özyilmaz, B.; Ahn, J.-H.; Hong, B.H. & Iijima, S. (2010). Roll-to-Roll Production of 30-inch Graphene Films for Transparent Electrodes. Nature Nanotechnology 5(8): 574-578 Bao, W.; Miao, F.; Chen, Z.; Zhang, H.; Jang, W.; Dames, C. & Lau, C.N. (2009). Controlled Ripple Texturing of Suspended Graphene and Ultrathin Graphite Membranes. Nature Nanotechnology 4(9): 562-566 Bolotin, K.I.; Sikes, K.J.; Hone, J.; Stormer, H.L. & Kim, P. (2008). Temperature-Dependent Transport in Suspended Graphene. Physical Review Letters 101(9): 096802 Casiraghi, C.; Pisana, S.; Novoselov, K.S.; Geim, A.K. & Ferrari A.C. (2007). Raman Fingerprint of Charged Impurities in Graphene. Applied Physics Letters 91(23): 233108 Das, A.; Pisana, S.; Chakraborty, B.; Piscanec, S.; Saha, S.K.; Waghmare, U.V.; Novoselov, K.S.; Krishnamurthy, H.R.; Geim, A.K.; Ferrari, A.C. & Sood, A.K. (2008). Monitoring Dopants by Raman Scattering in an Electrochemically Top-Gated Graphene Transistor. Nature Nanotechnology 3(4): 210-215 Fallahazad, B.; Kim, S.; Colombo, L. & Tutuc, E. (2010). Dielectric Thickness Dependence of Carrier Mobility in Graphene with HfO2 Top Dielectric. Applied Physics Letters 97(12): 123105 Farmer, D.B. & Gordon R.G. (2006). Atomic Layer Deposition on Suspended Single- Walled Carbon Nanotubes via Gas-Phase Noncovalent Functionalization. Nano Letters, 6(4): 699-703 Farmer, D.B.; Chiu H.-Y.; Lin Y.-M.; Jenkins, K.A.; Xia, F. & Avouris P. (2009). Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors. Nano Letters, 9(12): 4474-4478 Hesjedal, T. (2011) Continuous Roll-to-Roll Growth of Graphene Films by Chemical Vapor Deposition. Applied Physics Letters 98(13): 133106 Kim, S.; Nah, J.; Jo, I.; Shahrjerdi, D.; Colombo, L.; Yao, Z.; Tutuc, E. & Banerjee, S.K. (2009). Realization of a High Mobility Dual-Gated Graphene Field-Effect Transistor with Al2O3 Dielectric. Applied Physics Letters 94(6): 062107 Lee, B.; Park, S.-Y.; Kim, H.-C.; Cho, K.J.; Vogel, E.M.; Kim, M.J.; Wallace, R.M. & Kim J. (2008). Conformal Al2O3 Dielectric Layer Deposited by Atomic Layer Deposition for Graphene-Based Nanoelectronics. Applied Physics Letters 92(20): 203102 Lee, B.; Mordi, G.; Kim, M.J.; Chabal, Y.J.; Vogel, R.M.; Wallace, R.M., Cho, K.J.; Colombo, L. & Kim, J. (2010). Characteristics of High-k Al2O3 Dielectric Using Ozone-Based Atomic Layer Deposition for Dual-Gated Graphene Devices. Applied Physics Letters 97(4): 043107 Lemme, M.C.; Echtermeyer, T.J; Baus, M. & Kurz, H. (2007). A Graphene Field-Effect Device, IEEE Electron Device Letters 28(4): 282-284PDF Image | GRAPHENE SYNTHESIS CHARACTERIZATION PROPERTIES
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