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Atomic Layer Deposition of High-k Oxides on Graphene 109 layer to enable ALD of Al2O3. TMA and H2O were used as precursors and 167 cycles resulted in about 15-nm thick Al2O3 layer on graphene. The devices fabricated using this technique indicated the mobility in excess of 6000 cm2/Vs at room temperature. Consequently, the top-gate stack did not increase the carrier scattering significantly. A similar approach has later been used by several other groups, also with epitaxial graphene (Robinson, et al., 2010) and CVD graphene (Wu et al., 2011). 3.4 Polymer buffer layer for ALD of Al2O3 on graphene Wang et al. (2008) used a polymer film as a buffer layer in order to cover carefully cleaned graphene with a very thin (~2-3 nm) Al2O3 layer. They soaked the chip with graphene flakes in 3,4,9,10-perylene tetracarboxylic acid (PTCA) solution for ~30 min, rinsed thoroughly and blew dry. The chip was then immediately moved into the ALD reactor and Al2O3 was deposited from TMA and H2O at 100 oC. Figure 11 shows the AFM images of a graphene flake before and after ALD. Uniform coverage with an ultrathin Al2O3 film was achieved as the measured rms surface roughness of Al2O3 on graphene was as low as 0.33 nm. Fig. 11. AFM images of graphene (a) before ALD and (b) of the same area after ~2 nm Al2O3 deposition. Scale bar is 500 nm. (Adapted from Wang et al., 2008). 3.5 Metal seed layers for ALD of HfO2 on graphene Fallahazad et al. (2010) have investigated the carrier mobility in a single layer and bilayer exfoliated graphene with a top HfO2 dielectric as a function of the HfO2 film thickness and temperature. Prior to the HfO2 film with ALD technique, a thin (~1.5 nm) seed layer of Al was deposited by e-beam evaporation. The HfO2 layer was deposited at 200 oC fromPDF Image | GRAPHENE SYNTHESIS CHARACTERIZATION PROPERTIES
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