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Nucleation and Vertical Growth of Nano-Graphene Sheets 25 varied in the pretreatment step. In contrast, the conditions of the second step (subsequent CNW growth) were not changed to analyze the effects of the pretreatment. Table 1. Growth conditions C2F6, H2, and Ar gases were used to generate fluorocarbon radicals, H radicals, and Ar+ ions, respectively. For the pretreatment step, the flow rates of the C2F6, H2, and Ar gases were 5, 6, and 10 sccm, respectively, and the ICP power for the generation of fluorocarbon radicals, H radicals, and Ar+ ions were 200, 200, and 300 W, respectively. The reflection powers were less than 10% of forward powers. In the fluorocarbon radical source, CF3 radicals were predominantly generated. The gases with reactive species were pumped out using a turbo molecular pump through a gate valve. During the pretreatment, the total gas pressure ranged between 0.4 and 2.0 Pa, which was dependent on the combination of irradiation species (i.e. no operation of the gate valve between experiments with different variations of irradiation species). Si substrates were introduced to the center of the stage and the surface temperature was kept at 580°C during the 15 min pretreatment process. After pretreatment, CNW growth was conducted using the multi-beam CVD system under identical conditions. Ar+ ion, fluorocarbon radical, and H radical sources were also used and generated from Ar, C2F6 and H2 gases, respectively. The powers of each source were 300, 200, and 200 W, respectively, and the flow rates of Ar, C2F6, and H2 were 5, 10, and 6 sccm, respectively. The surface temperature was maintained at 580°C during the 35 min growth process period. Following the CNW growth process, samples were observed using a scanning electron microscope (SEM). For some samples, scanning tunneling microscopy (STM) was also conducted. Additionally, in situ spectroscopic ellipsometry was performed throughout the pretreatment and the CNW growth processes.PDF Image | GRAPHENE SYNTHESIS CHARACTERIZATION PROPERTIES
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