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Nucleation and Vertical Growth of Nano-Graphene Sheets 23 independently-controllable in the conventional PECVD system. Therefore, in this study, we employed the multi-beam CVD system having independently-regulated two radial sources and one ion source. Using this system, the effects of each active species on nucleation and vertical growth of nanographene during the formation of the CNWs can be systematically evaluated. 2.1.1 Multi-beam chemical vapor deposition system Figure 2 shows the schematic diagram of multi-beam CVD system. This system consists of 3 beams of carbon-containing radicals, hydrogen radicals, and ions.[14] Two radical sources (fluorocarbon and H radicals) were mounted obliquely at the upper right and left sides of the reactive chamber, and C2F6 and H2 gases were introduced into the radical sources separately. The identical radical sources consist of radio frequency (rf: 13.56 MHz) inductively coupled plasma (ICP) with spiral coil and grounded metal meshes in the head to retard irradiating electrons and ions. Orifices were installed in the head of fluorocarbon radical source and H radical source, respectively, in order to control the flux of radicals. Radicals generated in these sources irradiated a substrate with the angle of 30° from the horizontal line. On the other hand, the ion source was mounted on the top of the reactive chamber. The ion source consists of 13.56 MHz rf ICP. The plasma potential in the ICP was set to 0‒250 V by applying DC voltage. A metal mesh connecting to the ground was installed inside the ion source. Generated Ar+ ions were accelerated between the ICP and the mesh, and irradiated vertically a substrate. The ion current is measured using Faraday cup. Ar gas Ion source ICP(13.56MHz) C2F6 gas Xe lamp H2 gas Radical source ICP(13.56MHz) Radical source ICP(13.56MHz) Ar ion CF3 radical H radical PC Analyzer Substrate φ5cm Exhaust Exhaust Fig. 2. Schematic diagram of multi-beam CVD system.[13] HeaterPDF Image | GRAPHENE SYNTHESIS CHARACTERIZATION PROPERTIES
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