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Self-Standing Graphene Sheets Prepared with Chemical Vapor Deposition and Chemical Etching 11 spectrum reflecting the strong interfacial interaction. However, the additional graphene coverage changed the spectra to the non-linear curve at zero bias, exhibiting a feature of either semiconductor or insulator. Fig. 8. Typical LEED patterns of (a) h-BN/Ni(111) and (b), (c) graphene/h-BN /Ni(111). The pattern (c) was obtained for a longer exposure, while the pattern of (B) was measured for normal exposure. Fig. 9. Typical tunneling dI/dV spectra of (a) h-BN/Ni(111), (b) graphene/h-BN/Ni(111) and (c) HOPG. The metallic characters appeared for (a) h-BN/Ni(111). Additional two experimental indications were observed in electronic and vibrational structures. With respect to the interfacial bonding, the first-layer graphene interacts with TaC(111) substrate, with modified π branches of electronic structure and reduced work function. Owing to the coverage of the additional second layer, the modified π branches returned to the bulk-like π branch, which indicated that interfacial interaction became weak similar to that in bulk graphite (Nagashima et al., 1994). Another one was vibrational frequency change of phonons; the interfacial interaction reduces transverse optical (TO) frequencies of the first-layer by 20 % from the bulk ones onPDF Image | GRAPHENE SYNTHESIS CHARACTERIZATION PROPERTIES
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