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Graphene from Electrochemically Exfoliated Graphite

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Graphene from Electrochemically Exfoliated Graphite ( graphene-from-electrochemically-exfoliated-graphite )

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1. Introduction The unique electronic, thermal, chemical, optical and mechanical properties of graphene make it a promising material for a variety of applications in electronics, optical devices, high-performance composites, energy storage and conversion systems, field emission devices and sensors. [1] The graphene can be produced by different methods based on either bottom-up (e.g. chemical vapor deposition (CVD), arc discharge, etc.) or top-down (e.g. physical and chemical exfoliation of graphite) synthesis strategies. Although CVD and other bottom-up methods can produce a high-quality graphene, these processes are inviable for scaling- up because of their high cost and complexity. In contrast, top-down procedures based on the liquid-phase exfoliation of graphite constitute a reliable route for manufacturing graphene on a large scale. The direct liquid-phase exfoliation of graphite (physical exfoliation) can be carried out by means of ultrasonication or shear mixing in organic solvents (i.e. NMP or DMF) or in aqueous solutions in the presence of surfactants.[2] However, these procedures suffer from longer exfoliation times, low yields and the need for toxic solvents, factors which hinder the scaling-up of the process for the production of large amounts of graphene. Until now, the chemical exfoliation of graphite based on the Hummers method and analogous procedures have been the most popular route for producing graphene oxide (GO), which can be converted to graphene by reduction following a variety of procedures. Importantly, in 2008 Li et al. proposed a method of fabricating highly stable aqueous dispersions of graphene nanosheets based on the “in situ” reduction of GO suspensions.[3] This type of aqueous dispersion is highly versatile, easily processable and, in consequence, offers a sound basis for producing a large variety of graphene-based materials 2

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